Central regions | Technology & innovation

Scientists push for new way of non-volatile memory development

18 May '18
Russian scientists at Moscow-based Phystech (MIPT), a leading technology university, in partnership with their Korean colleagues have developed a new method which is expected to help create a promising new type of non-volatile memory.

At the heart of the technique is control of oxygen concentration in tantalum oxide films which are developed using plasma-enhanced atomic layer deposition (PEALD).

Resistive switching memory, or ReRAM, appears to be a promising new way of storing and processing information. Its built on technology that changes resistance in memory cells by voltages applied. So, a cells low or high resistance could be used to store data.

A ReRAM cell is based on a metal-dielectric-metal structure. Transition metal oxides have proved to be good dielectrics. Voltage applied to a cell causes oxygen migration, thus altering resistance in the entire structure. So, controllable oxygen concentration in an oxide is a key parameter to determine the functional properties of memory cells.

Nevertheless, in spite of tangible progress in ReRAM development, flash memory still holds sway in the market. Its quite understandable. To make flash memory, 3D cell matrices can be used to dramatically increase cell density on a chip. Oxygen-deficient film coating methods for ReRAM, however, are inapplicable for functional coating of 3D structures.

Its exactly in an effort to circumvent the snag that the MIPT scientists have used the PEALD method enabling thin film application by means of chemical reactions on the surface of a sample. In PEALD, picking the right reacting substances is critical.

The problem has been successfully solved by using an oxygen-containing tantalum precursor and plasma-activated hydrogen as a reactant.
Publish in Twitter
Write to Facebook
Google Buzz
Write to LiveJournal
Show in MM
Share MK
COMMENT ON THIS STORY
Find Related Content

Locations: Moscow

Tags: MIPT (38) / tantalum oxide (0) / plasma enhanced atomic layer deposition (0) / non volatile memory (0) / ReRAM (0) /

Latest News: Central regions
18 Jun '18 | Finance, business | Technology & innovation
8 Jun '18 | Technology & innovation | Finance, business
6 Jun '18 | Technology & innovation | Finance, business
4 Jun '18 | Finance, business | Technology & innovation
 

Feature stories

7 Jun '18
Russian scientists have come up with a new method of...
3 Apr '18
In regions most of European Russians will hardly ever...
21 Nov '17
Russian scientists have come up with what they say is...
Search (News archive - 21247)
Advertising
RB_Partners_Report
Advertising
gcvsymposium
Advertising
Independent Software Developers Forum
Advertising
Marchmont News

Latest News

18 Jun '18
BKS, a Russian company, and its partners are running...
15 Jun '18
Technology that comes from Krasnoyarsk in Siberia is...
14 Jun '18
Severstal, one of Russias largest mining and...

Most read stories from last week

18 Jun '18
BKS, a Russian company, and its partners are running...